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| 2N4403 New Product Vishay Semiconductors formerly General Semiconductor Small Signal Transistor (PNP) TO-226AA (TO-92) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) Features * PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. * As complementary type, the NPN transistor 2N4401 is recommended. * On special request, this transistor is also manufactured in the pin configuration TO-18. * This transistor is also available in the SOT-23 case with the type designation MMBT4403. max. 0.022 (0.55) 0.098 (2.5) Dimensions in inches and (millimeters) Mechanical Data Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk - 5K per container, 20K/box E7/4K per Ammo mag., 20K/box Bottom View Maximum Ratings & Thermal Characteristics Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation TA = 25C Derate above 25C TC = 25C Derate above 25C Symbol -VCEO -VCBO -VEBO -IC Ptot Ptot RJA RJC Tj TS Ratings at 25C ambient temperature unless otherwise specified. Value 40 40 5.0 600 625 5.0 1.5 12 200 83.3 150 -55 to +150 Unit V V V mA mW mW/C W mW/C C/W C/W C C Thermal Resistance Junction to Ambient Air Thermal Resistance Junction to Case Junction Temperature Storage Temperature Range Document Number 88118 08-May-02 www.vishay.com 1 2N4403 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TJ = 25C unless otherwise noted) Parameter Symbol Test Condition -VCE = 1 V, -IC = 0.1 mA -VCE = 1 V, -IC = 1 mA -VCE = 1 V, -IC = 10 mA -VCE = 2 V, -IC = 150 mA -VCE = 2 V, -IC = 500 mA -VEB = 0.4 V, -VCE = 35 V -VEB = 0.4 V, -VCE = 35 V -IC = 150 mA, -IB = 15 mA -IC = 500 mA, -IB = 50 mA -IC = 150 mA, -IB = 15 mA -IC = 500 mA, -IB = 50 mA -IC = 1 mA, IB = 0 -IC = 0.1 mA, IE = 0 -IE = 0.1 mA, IC = 0 -VCE = 10 V, -IC = 1 mA, f = 1 kHz -VCE = 10 V, -IC = 1 mA, f = 1 kHz -VCE = 10 V, -IC = 20 mA f = 100 MHz -VCB = 10 V, IE = 0, f = 1.0 MHz -VEB = 0.5 V, IC = 0 f = 1.0 MHz -VCE = 10 V, -IC = 1 mA f = 1 kHz -VCE = 10 V, -IC = 1 mA f = 1 kHz Min 30 60 100 100 20 -- -- -- -- 0.75 -- 40 40 5.0 1.5 0.1 * 10-4 200 -- -- 60 1.0 Typ -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Max -- -- -- 300 -- 100 100 0.40 0.75 0.95 1.30 -- -- -- 15 8 * 10-4 -- 8.5 30 500 100 Unit DC Current Gain hFE -- Collector Cutoff Current Base Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Input Impedance Voltage Feedback Ratio Current Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Small Signal Current Gain Output Admittance Notes: (1) Pulse test: Pulse width 300s - Duty cycle 2% -ICEV -IBEV -VCEsat -VBEsat -V(BR)CEO -V(BR)CBO -V(BR)EBO hie hre fT CCB CEB hfe hoe nA nA V V V V V k -- MHz pF pF -- S www.vishay.com 2 Document Number 88118 08-May-02 2N4403 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TJ = 25C unless otherwise noted) Parameter Delay Time (see fig. 1) Rise Time (see fig. 1) Storage Time (see fig. 2) Fall Time (see fig. 2) Symbol td tr ts tf Test Condition -IB1 = 15 mA, -IC = 150 mA, -VCC = 30 V, -VEB = 2 V -IB1 = 15 mA, -IC = 150 mA, -VCC = 30 V, -VEB = 2 V -IB1 = -IB2 = 15 mA, -IC = 150 mA, -VCC = 30 V -IB1 = -IB2 = 15 mA, -IC = 150 mA, -VCC = 30 V Min -- -- -- -- Typ -- -- -- -- Max 15 20 225 30 Unit ns ns ns ns Switching Time Equivalent Test Circuit Figure 1 - Turn-On Time -30V < 2 ns +2 V 0 1k -16 V 1.0 to 100s Duty Cycle - 2% +4 V Scope rise time - 4ns *Total shunt capacitance of test jig, connectors and oscilloscope C S* < 10 pF -16 V 1.0 to 100s Duty Cycle - 2% +4 V 200 +14 V 0 1k C S* < 10 pF < 20 ns Figure 2 - Turn-Off Time -30V 200 Document Number 88118 08-May-02 www.vishay.com 3 |
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